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| inchange y miconductor product specification silicon npn power transistors BUL742 description with to-220c package high voltage capability very high switching speed applications electronic ballast for fluorescent lighting switch mode power supplies pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 12 v i c collector current 4 a i cm collector current-peak (t p <5 ms) 8 a i b base current 2 a i bm base current-peak (t p <5 ms) 4 a p t total power dissipation t c =25 70 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.78 /w
inchange semiconductor product specification 2 silicon npn power transistors BUL742 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max ur½t v ceo(sus) collector-emitter sustaining voltage i c =100ma; l=25mh 400 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 12 v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.2a 0.5 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.4a 1.0 v v cesat-3 collector-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v v besat base-emitter saturation voltage i c =2a ;i b =0.4a 1.5 v i ces collector cut-off current v ce =900v; v be =0 100 a h fe-1 dc current gain i c =250ma ; v ce =5v 35 70 h fe-2 dc current gain i c =2a ; v ce =5v 10 35 switching times resistive load t s storage time 11 s t f fall time v cc =125v ,i c =0.5a i b1 =-i b2 =45ma t p =300 s 0.25 s inchange semiconductor product specification 3 silicon npn power transistors BUL742 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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